Method, system and device for recessed contact in memory array

ABSTRACT

Embodiments disclosed herein may relate to forming a contact region for an interconnect between a selector transistor and a word-line electrode in a memory device.

FIELD

Subject matter disclosed herein may relate to integrated circuitdevices, and may relate, more particularly, to memory-related circuitry.

BACKGROUND

Integrated circuit devices, such as memory devices, for example, may befound in a wide range of electronic devices. For example, memory devicesmay be used in computers, digital cameras, cellular telephones, personaldigital assistants, etc. Factors related to a memory device that may beof interest to a system designer in considering suitability for anyparticular application may include, physical size, storage density,operating voltages, granularity of read/write operations, throughput,transmission rate, and/or power consumption, for example. Other examplefactors that may be of interest to system designers may include cost ofmanufacture and/or ease of manufacture.

BRIEF DESCRIPTION OF THE DRAWINGS

Claimed subject matter is particularly pointed out and distinctlyclaimed in the concluding portion of the specification. However, both asto organization and/or method of operation, together with objects,features, and/or advantages thereof, it may best be understood byreference to the following detailed description if read with theaccompanying drawings in which:

FIG. 1 is an illustration depicting an isometric view of an exampleepitaxial stack for an example memory device, such as a phase changememory (PCM) device, according to an embodiment.

FIGS. 2A and 2B are illustrations depicting isometric views of a portionof an example memory device, such as a PCM device, according to anembodiment.

FIG. 3 is an illustration depicting an isometric view of a portion of anexample memory device, such as a PCM device, according to an embodiment.

FIG. 4 is an illustration depicting an isometric view of a portion of anexample memory device, such as a PCM device, according to an embodiment.

FIG. 5 is an illustration depicting an isometric view of a portion of anexample memory device, such as a PCM device, according to an embodiment.

FIGS. 6A-6C are illustrations depicting top plan and cross-sectionalviews of an example memory device, such as a PCM device, at one stage ofprocessing according to an embodiment.

FIGS. 7A-7C are illustrations depicting top plan and cross-sectionalviews of an example memory device, such as a PCM device, at a subsequentstage of processing according to an embodiment.

FIGS. 8A-8C are illustrations depicting top plan and cross-sectionalviews of an example memory device, such as a PCM device, at a subsequentstage of processing according to an embodiment.

FIGS. 9A-9C are illustrations depicting top plan and cross-sectionalviews of an example memory device, such as a PCM device, at a subsequentstage of processing according to an embodiment.

FIGS. 10A-10C are illustrations depicting top plan and cross-sectionalviews of an example memory device, such as a PCM device, at a subsequentstage of processing according to an embodiment.

FIGS. 11A-11C are illustrations depicting top plan and cross-sectionalviews of an example memory device, such as a PCM device, at a subsequentstage of processing according to an embodiment.

FIGS. 12A-12C are illustrations depicting top plan and cross-sectionalviews of an example memory device, such as a PCM device, at a subsequentstage of processing according to an embodiment.

FIGS. 13A-13C are illustrations depicting top plan and cross-sectionalviews of an example memory device, such as a PCM device, at a subsequentstage of processing according to an embodiment.

FIG. 14 is an illustration depicting an isometric view of a portion of aportion of an example memory device, such as a PCM device, at asubsequent stage of processing according to an embodiment.

FIG. 15 is a schematic block diagram depicting a system, including aphase change memory device, according to an embodiment.

Reference is made in the following detailed description to accompanyingdrawings, which form a part hereof, wherein like numerals may designatelike parts throughout to indicate corresponding and/or analogouscomponents. It will be appreciated that components illustrated in thefigures have not necessarily been drawn to scale, such as for simplicityand/or clarity of illustration. For example, dimensions of somecomponents may be exaggerated relative to other components. Further, itis to be understood that other embodiments may be utilized. Furthermore,structural and/or other changes may be made without departing from thescope of claimed subject matter. It should also be noted that directionsand/or references, for example, up, down, top, bottom, and so on, may beused to facilitate discussion of drawings and/or are not intended torestrict application of claimed subject matter. Therefore, the followingdetailed description is not to be taken to limit the scope of claimedsubject matter and/or equivalents.

DETAILED DESCRIPTION

FIG. 1 is an illustration depicting an isometric view of an examplesemiconductor layer stack for an example memory device, such as a PCMdevice, according to an embodiment. In an embodiment, a memory device,such as PCM device, may be fabricated at least in part by creating anepitaxial stack 100 comprising a substrate 110, a cathode region 120,and/or an anode region 130. A sealing region 140 may also be formed overand/or on a semiconductor layer stack. In an embodiment, the substrate110 may comprise a p-type semiconductor, such as p-type silicon, forexample. The cathode region 120 may comprise an n-type semiconductor,such as n-type silicon, in an embodiment. Also, in an embodiment, theanode region 130 may comprise a p-type semiconductor, such as p-typesilicon, for example. The cathode region 120 and the anode region 130may be formed, e.g., by epitaxial deposition. The skilled artisan willappreciate that, in other arrangements, vertical stacks of differentlydoped semiconductor layers can be formed by non-epitaxial techniques,such as by differently doping regions of a bulk semiconductor substrate.Additionally, the skilled artisan will appreciate that examples ofp-type and n-type doping provided herein can be reversed in otherexamples. The sealing region 140 may comprise a dielectric material,such as silicon nitride, for example.

In an embodiment, a semiconductor layer stack, such as the illustratedepitaxial stack 100, may formed in an area of a wafer in which circuitryin which a dielectric material, such as a silicon oxide material, mayhave been previously deposited or otherwise formed. The semiconductorlayer stack may be formed and/or utilized in conjunction with a shallowtrench isolation (STI) configuration and/or architecture, for example.In an embodiment, an array of selector transistors for a respectivearray of memory cells, such as phase change memory (PCM) storage cells,may be patterned from a semiconductor layer stack, such as theillustrated epitaxial stack 100, as discussed below.

FIGS. 2A and 2B are illustrations depicting isometric views of a portionof an example memory device, such as a PCM device 200, according to anembodiment. In an embodiment, a semiconductor layer stack, such as theillustrated epitaxial stack 100 discussed above and depicted in FIG. 1,may be patterned to form an array of selector transistors that may beutilized with an array of PCM memory cells, for example. For example,selector transistors may comprise bipolar junction transistors (BJT),and individual selector transistors may comprise a collector, a base,and/or an emitter. In an embodiment, individual BJT selector may includea collector material 210, comprising a p-type silicon substrate similarto substrate 110 discussed above and depicted in FIG. 1. Individual BJTselector transistors may also include a base material 220, comprising ann-type silicon cathode material similar to cathode 120 discussed aboveand depicted in FIG. 1. Also, in an embodiment, individual BJT selectortransistors may also include emitters 220, comprising a p-type siliconanode material similar to anode 130 discussed above and depicted in FIG.1.

In an embodiment, an array of selector transistors for the PCM device200 may be patterned utilizing a pitch multiplication operation, such asa self-aligned, double-patterning (SADP) technique. Utilization of anSADP technique to form selector transistors from a semiconductor layerstack, such as the illustrated epitaxial stack 100, may provide abenefit of not calling for use of more complicated mask operations, ascompared with conventional techniques, for example. A fabricationprocess may be simplified, for example, by a reduction in an amount oflithographic masks and/or utilization of self-aligned techniques wherebyexisting structures may be utilized as masks during integrated circuitfabrication. Simplified fabrication techniques may improve manufacturingyield and/or device reliability, for example, and/or may reducemanufacturing time and/or costs. Additionally, by allowing formation offeatures having dimensions smaller than would otherwise be possibleutilizing lithographic techniques, greater memory density may beachieved, among other potential benefits including improved powerconsumption and device performance, for example.

As depicted in FIG. 2A, columns may be patterned in a semiconductorlayer stack, such as the illustrated epitaxial stack 100 (FIG. 1), in abit-line direction and in FIG. 2B rows may be patterned in a word-linedirection, for example. Columns (bit-line direction) may be patternedaccording to a shallow trench isolation (STI) process, while the rows(word-line direction) may be patterned according to a deep trenchisolation (DTI) process. DTI trenches are shown etched into thesubstrate 210 in FIG. 2B, and similarly in the embodiments describedbelow, to ensure separation of word-lines. Although FIGS. 2A and 2Bdepict columns being formed in a bit-line direction followed by rowsbeing formed in a word-line direction, claimed subject matter is notlimited in scope in this respect, and the assignment of columns tobit-lines and rows to word-lines is conventional but arbitrary.Moreover, in other embodiments, an epitaxial stack may be patterned in aword-line direction followed by patterning in a bit-line direction.Also, in an embodiment, a word-line direction may cross with a bit-linedirection, but the lines may not be orthogonal.

FIG. 3 is an illustration depicting an isometric view of a portion of anexample memory device, such as a PCM device 300, according to anembodiment. In an embodiment, the PCM device 300, may employ one or moretransistors, such as one or more bipolar junction transistors, forexample, as selectors for individual memory cells. For example, thememory device may comprise one or more transistors including one or morecollector components 310, one or more base components 320, and one ormore emitter components 330. In an embodiment, collector 310 maycomprise a p-type silicon material, base 320 may comprise an n-typesilicon material, and emitters 330 may comprise p-type silicon material,for example. Also, in an embodiment, an emitter, base, and collectorcombination may form one or more bipolar junction transistors, forexample. In an embodiment, a base component 320, a collector component310, and one or more emitter components 330, may comprise one or moretransistors, wherein a base component 320 and a collector component 310may be common across one or more transistors, although claimed subjectmatter is not limited in scope in these respects. For the examplesdescribed herein in connection with FIGS. 3-5, one or more insulatingmaterials separating conductive features within the example memorydevices are omitted for ease of illustration.

In an embodiment, a memory cell, such as phase change memory (PCM) cell340, may be selected, such as by use of sufficient and/or appropriatesignals, such as voltage signals, with a first electrode, such asword-line electrode 360, and/or with a second electrode, such asbit-line electrode 370. An electrically conductive component, such as an“electrode,” refers to a component that may be utilized to route signalsand/or to supply power within a memory array. An electrically conductivecomponent, such as an electrode, may comprise a sufficientlyelectrically conductive material, such as polysilicon, carbon, and/ormetallic material, such as tungsten, titanium nitride, and/or titaniumaluminum nitride, for example, for use in a memory device. Exampleelectrically conductive components may include, for example, word-lineinterconnects 355, word-line contacts 350, word-line electrodes 360,and/or bit-line electrodes 370. Of course, claimed subject matter is notlimited in scope in these respects. Other materials may, of course, alsobe used in one or more embodiments.

For a memory device, such as PCM device 300, a memory cell, such asphase change memory (PCM) cell 340, may comprise a chalcogenidematerial, in an embodiment. A PCM cell, for example, may have aconfiguration to retain or store a memory state comprising one of atleast two different selectable states. In a binary system, states maycomprise a binary “0” value or a binary “1” value, where a “set” state,representing a binary value of “1,” for example, may correspond to amore crystalline, more conductive state for a PCM material and a “reset”state, representing a binary value of “0,” for example, may correspondto a more amorphous, more resistive state. In other systems, at leastsome individual memory cells may have a configuration to store more thantwo levels or states. In a PCM array, heat sufficient to change a phaseof a memory cell may be achieved by use of a current and/or voltagepulse, in an embodiment, either through an adjacent heater or throughself-heating due to current flow through the phase change materialitself. Further, in one or more example embodiments, memory devices maycomprise one or more technologies other than PCM, such as resistivememory technologies and/or other types of memory, and claimed subjectmatter is not limited in scope in this respect.

In one or more embodiments, challenges may be faced in electricallyconnecting word-line electrodes 360 to base components 320 of selectortransistors, for example. Looking at FIG. 2, for example, it may be seenthat merely connecting a word-line electrode to a particular line ofselector transistors in an array 200, for example, would bring theword-line electrode into contact with an anode, or emitter, portion ofone or more selector transistors. FIG. 3 depicts word-line contacts 350that may be formed, for example, by heavily doping with n-type atoms aword-line contact region after a semiconductor layer stack, such asepitaxial stack 100 (FIG. 1), has been patterned to form an array ofselector transistors.

FIG. 4 is an illustration depicting an isometric view of a portion of anexample conventional memory device, such as a PCM device 400, accordingto an embodiment. PCM device 400, in an embodiment, may comprise acollector material 410, a base component 420, and emitters 430, forexample formed according to techniques discussed above in connectionwith FIG. 2. FIG. 4 depicts a word-line contact region 450, comprisingone or more emitters 430, being heavily doped with n-type atoms tochange electrical properties of emitters 430 in word-line contact region450. In an embodiment, one or more masks may be utilized to protectportions of PCM device 400 not selected for doping. One disadvantage ofcreating word-line contact regions in this manner may be a need toutilize a relatively expensive mask operation that may need to adhere torelatively tight tolerances due to relatively small feature size, forexample. Additionally, challenges may be faced in doping p-typesemiconductor material anode regions to generate word-line contactregions with sufficient electrical conductivity. In other words, apotential disadvantage of utilizing a mask operation to dope anodematerial to form word-line contact regions may comprise difficulties inachieving low-resistance word-line contacts.

FIG. 5 is an illustration depicting an isometric view of a portion of anexample memory device, such as a PCM device 500, according to anembodiment. In an embodiment, a memory cell with a storage element, suchas phase change memory (PCM) storage component 540, may be selected,such as by use of sufficient and/or appropriate signals, such as voltagesignals, with a first electrode, such as word-line electrode 560, and/orwith a second electrode, such as bit-line electrode 570. In anembodiment, potential difficulties and/or challenges and/ordisadvantages of memory devices 400 (FIG. 4), for example, may beaddressed at least in part by formation of recessed word-line contactregions 550, whereby word-line interconnects 555 may connectsubstantially directly to base component 520. The illustrated word-linecontact regions 550 make contact with a word-line interconnect 555, at acathode, or base component 520, level, which is recessed relative to toplevel of the select transistors represented by anode or emitter regions510. For example, referring to FIG. 3, word-line interconnect 355 isdepicted as contacting word-line contact region 350 at a heightapproximately equivalent to that of emitters 330. By contrast, referringto FIG. 5, word-line interconnect 555 is depicted as contactingword-line contact region 550 at a level approximately equivalent to basecomponent 520, in an embodiment.

Also, in an embodiment, base component 520 may comprise n-type siliconmaterial. Additionally, collector component 510 may comprise p-typesilicon, and emitters 530 may comprise p-type silicon, for example,although claimed subject matter is not limited in scope in theserespects. In an embodiment, collector component 510 may be referred toas a p-type silicon substrate, base component 520 may be referred to asan n-type cathode, and emitters 530 may be referred to as p-type anodes,for example.

In an embodiment, word-line contact regions 550 may be formed at leastin part by utilizing different pitch multiplication patterns amongword-lines and/or bit-lines, as described more fully below in connectionwith FIGS. 6A-14. In general, and in an embodiment, pattern and/or pitchinterruption along a word-line direction utilizing SASP techniques maybe utilized to form word-line contact regions 550, allowingsubstantially direct connection of word-line interconnects 555 to basecomponent 520, for example. In an embodiment, pattern and/or pitchinterruption utilizing pitch multiplication techniques may provide foravoiding utilization of a mask operation to dope anode regions to createword-line contact regions, and challenges and/or disadvantages ofutilizing such an approach may be avoided and/or ameliorated. Theword-line contact region 550 can represent an interruption of a pitchmultiplication pattern on either side of the recessed word-line contactregion 550. The pitch multiplication pattern of an illustratedembodiment is applied, on either side of the word-line contact region550, to memory cells on either side, particularly to the widthdimensions of selector transistors (e.g., emitters) and storagecomponents (e.g., phase change memory components).

In an embodiment, by utilizing a pitch multiplication operations, suchas a self-aligned double patterning (SADP) technique, for example in amanner depicted in FIGS. 6A-14, or in a similar manner, connectionsbetween one or more electrically conductive electrodes, such as one ormore word-line electrodes 560, and one or more base components 520, maybe made in a more reliable manner, and/or in a manner that avoidsutilizing an additional mask operation, in accordance with one or moreembodiments. For example, for embodiment 500 depicted in FIG. 5, a basecomponent 520 may be patterned, at least in part, by forming one or moretrenches positioned in a semiconductor material and elongated in adirection approximately orthogonal to word-line electrode 560. In anembodiment, a shallow-trench isolation (STI) structure may beimplemented to separate emitters and memory cell storage elements, andat the same time and same depth defining the word-line contact regions550, although claimed subject matter is not limited in scope in thisrespect. In an embodiment, one or more trenches in accordance with anSTI implementation may be formed at least in part by a plasma etchprocess, although again, claimed subject matter is not limited in scopein this respect. Also, in an embodiment, a base component 520 may beformed at least in part by epitaxy, although claimed subject matter isnot limited in scope in this respect. For example, a solid epitaxialmaterial of n-doped silicon may be formed, such as by vapor phasedeposition, over collector material 510, in an embodiment. In anembodiment, a base component 520 of a selector transistor may be heavilydoped, such as with an n-buried implant, for example, to reduceresistance of the base component 520.

In FIGS. 6A-14, discussed below, cross-sectional views of anillustration of a portion of an example PCM memory array are depictedshowing various stages of an example fabrication process, in accordancewith an embodiment. Of course, claimed subject matter is not limited inscope to the particular examples described herein. In FIGS. 6A-14, a topview is provided. Additionally, cross-sectional views looking in twodirections, an “X” or word-line direction and a “Y” or bit-linedirection, are provided. In an embodiment, an “X” direction may besubstantially orthogonal to a “Y” direction, although in otherembodiments the lines need not be orthogonal. Not shown in any detail inFIGS. 6A-14, and not discussed herein, is circuitry that may be formedaround a periphery of a storage array, for example. Rather, FIGS. 6A-14are meant to illustrate example aspects related to fabrication of one ormore recessed word-line contact regions 550, in accordance with one ormore embodiments.

FIGS. 6A-6C are illustrations depicting a top view and also depictingcross-sectional views of a portion of example PCM device 500 showing astage of an example fabrication process, in accordance with anembodiment. At a stage of an example fabrication process of example PCMdevice 500 depicted in FIG. 5, an epitaxial stack comprising a substrate510, also referred to as a collector component, a cathode region 520,also referred to as a base component, and an anode region 530, alsoreferred to as an emitter, may have been previously patterned into oneor more word-line strings 660, comprising one or more rows of cathodematerial 520, emitter material 530, and a dielectric material, such assilicon nitride material 610, in an embodiment. In the discussion thatfollows in connection with FIGS. 6A-14, bit-line patterns may becreated, according to one or more embodiments.

As depicted in FIGS. 6A-6C, a dielectric material, such as silicon oxidematerial 620, may be deposited and/or otherwise formed over and/or onword-line strings 660, in an embodiment. In an embodiment, a mask may beformed over and/or on silicon oxide material 620. In the illustratedexample a hard mask may be first formed by depositing and/or otherwiseforming a carbon material 630 over and/or on silicon oxide material 620,and by depositing and/or otherwise forming a dielectric material, suchas silicon nitride material 640, over carbon material 630, for example.

As further depicted in FIGS. 6A-6C, a photoresist (not shown) andanother hard mask material, such as bottom anti-reflective coating(BARC) material, may be deposited or otherwise formed over and/or onnitride material 640, and the hard mask material may be patterned toform lines 650, in an embodiment. Also, in an embodiment, the lines 650may be patterned to have a pitch more relaxed than a pitch for anexample PCM storage array. For example, the lines 650 may comprise awidth greater than a reduced feature size “α*F (with α>1)”, for example,as depicted in FIG. 6B, where F represents the node size for theunderlying array. Also, in an embodiment, to achieve a width ofapproximately a reduced feature size “F”, a trimming operation may beperformed on lines 650, as depicted by trimmed regions 680. An exampletrimming operation for BARC material of lines 650 may comprise ananisotropic etch, although claimed subject matter is not limited in thisrespect. In an embodiment, lines 650 may be trimmed to a width smallerthan that obtainable via conventional lithographic techniques, forexample. Thus a non-critical mask may be employed to initially definethe lines and trimming may produce narrower lines without affecting thepitch.

In an embodiment, and as depicted in FIG. 6B, pairs of lines 650 may beformed with a pitch of “4F+x”. In an embodiment, individual pairs oflines 650 may be spaced apart by an approximate distance of “4F”,meaning approximately four times a width of a reduced feature/node sizefor a particular manufacturing technology. For example, individual BJTdevices shown in FIG. 5 may have a width and minimum separation fromneighboring devices of F. The emitters 530 of such individual BJTdevices, and the associated PCM storage components 540 of the memorycells, similarly have a width and minimum separation from emitters ofneighboring devices of F. A pitch of “4F+x” may denote a pitchapproximately equivalent to four times a width of a reduced feature sizefor a particular manufacturing technology plus additional spacing thatwill ultimately be employed in defining the contact region. In theillustrated example, x is approximately 4F, such that the pitch for onepair of lines is approximately double the pitch (e.g., about 8F) ofadjacent more closely spaced pairs (e.g., about 4F). As may be seen inremaining FIGS. 7A-14, a space of approximately 4F+x between pairs oflines 650 may be exploited to create word-line contact regions 550, forexample. Other adjacent pairs of lines 650 may have a different pitch,illustrated as 4F, such that the lines with pitch 4F+x can represent apitch interruption in the tighter pitch pattern of surrounding lines650, and can be considered a relaxation in pitch relative to neighboringpairs of lines 650. The actual spacing between features bordering on thepitch interruption region, which will be the same as the word-linecontact region in this example, may be altered by the subsequentself-aligned double patterning process, as will be understood from thedescription below, but remains larger than the spacing between adjacentfeatures in the rest of the tightly spaced array. In an embodiment, awidth of a reduced feature size F may comprise approximately a width ofa phase change memory storage component, such as PCM storage component540.

FIGS. 7A-7C are illustrations depicting a top view and also depictingcross-sectional views of a portion of example PCM device 500 showing astage of an example fabrication process, in accordance with anembodiment. As depicted in FIGS. 7A-7C, a conformal spacer layer 710,such as a low-temperature oxide (LTO) material, may be conformallydeposited and/or otherwise formed over and/or on example PCM device 500,including over and/or on lines 650, in an embodiment. In anotherembodiment, the conformal spacer layer 710 comprises silicon nitride.

FIGS. 8A-83 are illustrations depicting a top view and also depictingcross-sectional views of a portion of example PCM device 500 showing astage of an example fabrication process, in accordance with anembodiment. As depicted in FIGS. 8A-8C, the conformal spacer layer 710may be etched, such as by an anisotropic spacer etch, to form sidewallspacers 810 positioned on substantially vertical sides of lines 650, inan embodiment.

FIGS. 9A-9C are illustrations depicting a top view and also depictingcross-sectional views of a portion of example PCM device 500 showing astage of an example fabrication process, in accordance with anembodiment. As depicted in FIGS. 9A-9C, remaining BARC material may beetched to remove lines 650 while avoiding substantial damage to thespacer layer 710. As further depicted in FIGS. 9A-9C, removing lines 650may result in formation of spacers 810 that may be utilized to furtherpattern word-line strings 660, as discussed below. As the lines 650 wereemployed to provide patterns for the spacers 810 and then removed, thelines 650 can be considered sacrificial mandrels for forming the spacers810. The thickness of the spacer layer 710 deposited in FIGS. 7A-7C canrepresent F in this example, such that the pitch interruption 4F+x (FIG.6B) has been reduced by 2F by the spacer process, which can also bereferred to as a self-aligned double patterning (SADP) process, which isa species of pitch multiplication. For example, if the width of thepitch interruption in FIG. 6B was 4F+x=8F, then the corresponding pitchinterruption may have a width of about 6F in FIGS. 9A-9C. Whereas thespacers 810 have a width defined to be F, and closely spaced spacers inthe array are separated by about F, the width of the pitch interruptionregion in FIGS. 9A-9C may be 2F+x, and may be greater than 4F, as shown.In the illustrated embodiment, the pitch interruption region has a widthof about 6F, such that x=4.

FIGS. 10A-10C are illustrations depicting a top view and also depictingcross-sectional views of a portion of example PCM device 500 showing astage of an example fabrication process, in accordance with anembodiment. The hard mask spacers 810 of FIGS. 9A-9C form closed loops.To create isolated lines from the spacers 810, the loop ends may beremoved. For example, as depicted in FIG. 10A with dashed lines, a cutmask 1010 may be utilized to remove selected LTO material to avoidshunted and/or shorted strings, for example. In FIG. 10A, the elements1010 can represent openings in a mask through with the loop ends of thespacers 810 can be etched prior to transferring the pattern into lowerlayers. Alternatively, the elements 1010 can represent blocking portionsof a mask overlying the loop ends, such that the loop ends areineffective during subsequent transfer of the spacer pattern into lowerlayers.

FIGS. 11A-11C are illustrations depicting a top view and also depictingcross-sectional views of a portion of example PCM device 500 showing astage of an example fabrication process, in accordance with anembodiment. As depicted in FIGS. 11A-11C, the pattern of the spacers 810(FIGS. 9A-9C), with the exception of the loop ends, may be transferredinto lower layer(s). For example, a hard mask comprising silicon nitride640 and/or carbon material 630 may be patterned to produce structures1110 that may be utilized in self-aligned etching techniques to furtherpattern word-line strings 660, as described below. Structures 1110 maybe patterned according to a pattern of the spacers 810 (FIGS. 9A-9C)from hard mask material comprising silicon nitride material 640 andcarbon material 630, for example, utilizing an etch process, in anembodiment. In this manner, a pattern of the spacers 810 may betransferred to hard mask material, which in the illustrated embodimentcomprises silicon nitride 640 and carbon material 630, to formstructures 1110, for example.

FIGS. 12A-12C are illustrations depicting a top view and also depictingcross-sectional views of a portion of example PCM device 500 showing astage of an example fabrication process, in accordance with anembodiment. As depicted in FIGS. 12A-12C, a dielectric material, such assilicon oxide 620 (FIGS. 11A-11C), may be patterned to producestructures 1210 that may be utilized in self-aligned etching techniquesto further pattern word-line strings 660, as described below. Structures1210 may be patterned according to hard mask structures 1110 comprisingsilicon nitride material 640 and carbon material 630, for example,utilizing an etch process, in an embodiment. In this manner, a patternof hard mask structures 1110 (FIGS. 11A-11C) may be transferred tosilicon oxide material 620 to form structures 1210, for example. FIGS.12A-12C also show the pattern of structures 1210 crossing over thepattern of the underlying word-line strings 660, which are representedin FIGS. 12A-12C by the dielectric layer 610 at the tops of theword-line strings 660. The etching of the oxide layer 620 to leavestructures 1210 may stop upon exposure of the dielectric layer 610(which can be a different material, such as silicon nitride), at thesame time exposing underlying oxide layer 1220.

FIGS. 13A-13C are illustrations depicting a top view and also depictingcross-sectional views of a portion of example PCM device 500 showing astage of an example fabrication process, in accordance with anembodiment. As depicted in FIG. 13C, word-line strings 660 may bepatterned utilizing a self-aligned etching technique according to apattern of structures 1210 that were formed in the overlying siliconoxide material 620, in an embodiment. For example, structures 1210 maybe utilized as a mask to etch word-line strings 660 to create an arrayof selector transistors, as depicted in FIG. 14 and as discussed below.Individual selector transistors take the shape of pillars after theetch, and may each comprise a collector component 510, comprising ap-type substrate, for example, and may further comprise a base component520, comprising an n-type cathode, in an embodiment. The base component520 and collector component 510 may be shared by multiple selectortransistors of the array. An individual selector transistor may furthercomprise an individual emitter 530, comprising a p-type anode, in anembodiment, that is not shared with other selector transistors. The etchmay thus define shallow trench isolation (STI) separating selectortransistors of the array, and also separating memory storage elements ofindividual memory cells. This same etch may define, in an embodiment,the recessed word-line contact 550 at the same depth as the STIseparating selector transistors of the array, and may be positionedbetween sets of selector transistors, in an embodiment.

As discussed above in connection with FIGS. 6A-6C, space was providedfor the word-line contact 550 by properly spacing apart lines 650 in onemask layer, and this space was transmitted through intervening masklayers. As noted with respect to the spacers 810 of FIGS. 9A-9C,individual selector transistors (e.g., represented by individualemitters 530 in the BJT example of the figures) may have a width of Fand minimum spacing from adjacent selector transistors of about F;whereas a width of the word-line contact 550 may be greater than 4F. Thecorresponding PCM storage components 540 of the memory cells maysimilarly have a width of F and separation of about F, except at thepattern interruption represented by the word-line contact 550.Additionally, in an embodiment, the structures 1220 used as a hard maskfor this etch may also be etched, at least in part.

FIG. 14 is an illustration depicting an isometric view of a portion of aportion of an example memory device, such as a PCM device 500, accordingto an embodiment. As depicted in FIG. 14, a semiconductor layer stack,such as epitaxial stack 100, may be patterned in a bit-line directionand/or in a word-line direction to form an array of individual selectortransistors comprising a collector component 510, a base component 520,and an emitter 530. As mentioned above, collector component 510 and basecomponent 520 may be shared among one or more selector transistors, andindividual selector transistors may comprise individual emitters 530, inan embodiment.

In an embodiment, recessed word-line contact regions 550 may be formedutilizing a pitch multiplication operation, such as a self-aligneddouble patterning (SADP) technique. Also, in an embodiment, patternand/or pitch interruption along a word-line direction utilizing SADPtechniques may be utilized to form word-line contact regions 550,allowing substantially direct connection of word-line interconnects,such as word-line interconnects 555 (FIG. 5), to base components 520,for example. In an embodiment, pattern and/or pitch interruptionutilizing SADP techniques may avoid utilization of a mask operation todope anode regions to create word-line contact regions, and challengesand/or disadvantages of utilizing such an approach may be avoided. In anembodiment, a semiconductor layer stack, such as epitaxial stack 100,may be formed utilizing selected and/or appropriate doping levels and/ortypes at individual regions of stack 100 to provide desired propertiesfor various components of selector transistors to be formed from stack100. For example, an n-type cathode region 120, may be dopedsufficiently with appropriate materials to provide relatively lowresistance base components 520, for example, and to provide relativelylow resistance word-line contact regions 550, in an embodiment.

Embodiments in accordance with claimed subject matter may compriseforming one or more n+ buried word-line contact regions in a mannersubstantially integrated with double-patterning techniques utilized infabricating PCM arrays with bipolar selector transistors. Benefits thatmay be realized may include, for example, improved manufacturing yield,improved memory device reliability, reduced manufacturing costs, andincreased memory density, although claimed subject matter is not limitedin these respects.

Also, in one or more embodiments, selector components for a memory arraymay comprise bipolar-type selectors, such as bipolar junctiontransistors (BJT), for example. While the examples provided hereindiscuss pnp BJT devices, the embodiments can also be applied to npn BJTdevices with p+ buried word-line contact regions and base/cathodematerials rather than the n+ materials of the examples. More generally,vertical BJT devices can be formed from stacked materials wherein alower material having a first conductivity type, a middle materialhaving a second conductivity type opposite to the first conductivitytype, and an upper material having the first conductivity type.

In other embodiments, other types of selector transistors may beemployed. For example, thyristors may be utilized, whereby patterningprocesses to separate individual thyristors, particularly with pitchmultiplication for dense arrays, simultaneously creates room for makingcontact to the thyristors. The illustrated BJT embodiments employ threelayers in an npn stack; a thyristor embodiment may employ, for example,five layers in a pnpnp stack, from top to bottom including a p+ emitter,n− base, p− base, n+ cathode and p− substrate, defining four junctions.The shallow trench isolation process that separates pillars and memorycells can etch through the top two junctions, thus separating p+emitters and n-base of neighboring cells, while partially etchingthrough the p− base. The deep trench isolation process can etch throughthe upper three junctions to stop the etch within the n+ cathode layer.In such an embodiment, the selector transistors (particularly p+emitters and n-bases) can have width dimensions in accordance with apitch multiplication pattern on either side of a word-line contact,which represents an interruption of the regular spacing of the pitchmultiplication pattern on either side. Of course, claimed subject matteris not limited in scope in these respects.

The word-line contact region formed as described above may be recessedrelative to the top level of the vertical selector transistors of thearray. For the BJT embodiments illustrated herein, the word-line contactregion is recessed relative to the tops of the emitters for the selectortransistors of the array. In operation, an electrode of the memory arraymay be energized to energize one or more selector transistors of thememory array by way of an electrically conductive interconnect. Theinterconnect may be in substantially direct contact with the recessedword-line contact region. For example, the recessed contact region maybe formed in a cathode material of the one or more selector transistors.Energizing the selector transistor may in turn energize one or morephase change material storage cells electrically connected to the one ormore selector transistors as part of a programming operation.

FIG. 15 is a schematic block diagram depicting an example system 1500including an example PCM device 1520. In an embodiment, PCM device 1520may comprise a storage area 1522 including an array of PCM cells, suchas in accordance with one or more examples. PCM device 1520 may, in anexample embodiment, be coupled to a processor 1510 by way of aninterconnect 1515.

PCM device 1520 in an embodiment may comprise a control unit 1526.Additionally, storage area 1522 may store instructions 1524 that mayinclude one or more applications that may be executed by processor 1510,according with an embodiment. Processor 1510 may transmit a memoryaccess command to PCMS device 1520, for example. Control unit 1526 mayaccess one or more memory cells of storage area 1522 at least in part inresponse to receiving the memory access command from processor 1510,according to an embodiment. Of course, computing platform 1500 is merelyone example of a system implemented in accordance with claimed subjectmatter, and the scope of claimed subject matter is not limited in theserespects.

In one implementation, a method is provided. The method includes formingone or more recessed word-line contact regions in a first material of aphase change memory array, including performing a pitch multiplicationoperation.

Forming the recessed word-line contact regions can include formingburied n+ silicon word-line contact regions. Performing the pitchmultiplication operation can include performing a self-aligneddouble-patterning operation on a stack of semiconductor layers includingthe first material over a substrate material, where the first materialhas an opposite conductivity type from the substrate material. The stackcan also include a second material over the first material, where thesecond material has the conductivity type of the substrate material.Performing the pitch multiplication operation can provide a patterninterruption to create the recessed word-line contact regions. Providingthe pattern interruption can create a space created between a pair ofselector transistor that is greater than four times a width of one ofthe selector transistors in the phase change memory array. Performingthe pitch multiplication operation can include defining a plurality ofselector transistors each having an emitter and forming a phase changememory storage component over each emitter. Performing the pitchmultiplication operation can include patterning one or more word-linestrings in a stack of semiconductor layers, wherein the one or moreword-line strings individually comprise a collector component comprisingthe substrate material, a base component, and an emitter component, andwherein the one or more word-line strings are oriented in a word-linedirection. Performing the pitch multiplication operation can alsoinclude depositing a dielectric material over the one or more word-linestrings. Performing the pitch multiplication operation can furtherinclude creating one or more pairs of lines over the dielectricmaterial. Creating the one or more pairs of lines on the hard mask caninclude spacing two of the one or more pairs of lines apart by adistance of approximately greater than four times a width of a phasechange memory storage component. Performing the pitch multiplicationoperation can also include forming sidewall spacers on the one or morepairs of lines. Performing the pitch multiplication operation can alsoinclude transferring a pattern of the sidewall spacers into thedielectric material. A pattern of the spacers can be transferred intothe word-line strings. Forming the one or more recessed word-linecontact regions in the first material can include forming trenches toinsulate memory cells of the phase change memory array.

In another implementation, a memory device is provided. The memorydevice includes an array of memory cells each comprising a selectortransistor. The array includes a word-line contact region in a basecomponent in substantially direct contact with an electricallyconductive interconnect electrically coupled to a word-line electrode.The word-line contact region is positioned between memory cells of thearray.

The word-line contact region can have a width between a pair of selectortransistors of the array that is greater than two times a width of eachof the selector transistors. The width of the word-line contact regioncan be greater than four times the width of each of the selectortransistors. The selector transistors can be regularly spaced along aword-line direction in accordance with a pitch multiplication pattern oneither side of the word-line contact region, and the word-line contactregion can represent an interruption of the pitch multiplicationpattern. The selector transistors can be bipolar junction transistors.The base component can include a cathode component common to a pluralityof the selector transistors. Each selector transistor can furtherinclude an emitter component electrically coupled to the base component,where the word-line contact region is recessed relative to the emitters.Each memory cell of the array of memory cells can include a phase changememory storage element electrically coupled between the emitter and abit-line electrode. The word-line contact region can have a widthbetween a pair of emitters greater than four times a width of the phasechange memory storage component in each memory cell. The device can alsoinclude trenches having a depth to insulate select transistors ofadjacent memory cells, where the word-line contact region has a depthsubstantially the same as the depth of the trenches.

In another implementation, a method is provided. The method includesenergizing an electrode of a memory array to energize one or moreselector transistors of the memory array by way of an electricallyconductive interconnect in substantially direct contact with a recessedcontact region formed in a cathode material of the one or more selectortransistors, and to energize one or more phase change material storagecells electrically connected to the one or more selector transistors aspart of a programming operation.

Emitters of the selector transistors can be regularly spaced along aword-line direction in accordance with a pitch multiplication pattern oneither side of the recessed word-line contact region, and the word-linecontact region can represent an interruption of the pitch multiplicationpattern.

The term “computing platform” as used herein refers to a system and/or adevice that includes the ability to process and/or store data in theform of signals and/or states. Thus, a computing platform, in thiscontext, may comprise hardware, software, firmware or any combinationthereof (other than software per se). Computing platform 1500, asdepicted in FIG. 15, is merely one such example, and the scope ofclaimed subject matter is not limited to this particular example. Forone or more embodiments, a computing platform may comprise any of a widerange of digital electronic devices, including, but not limited to,personal desktop or notebook computers, high-definition televisions,digital versatile disc (DVD) players and/or recorders, game consoles,satellite television receivers, cellular telephones, personal digitalassistants, mobile audio and/or video playback and/or recording devices,or any combination of the above. Further, unless specifically statedotherwise, a process as described herein, with reference to flowdiagrams and/or otherwise, may also be executed and/or controlled, inwhole or in part, by a computing platform.

The terms, “and”, “or”, and “and/or” as used herein may include avariety of meanings that also are expected to depend at least in partupon the context in which such terms are used. Typically, “or” if usedto associate a list, such as A, B or C, is intended to mean A, B, and C,here used in the inclusive sense, as well as A, B or C, here used in theexclusive sense. In addition, the term “one or more” as used herein maybe used to describe any feature, structure, and/or characteristic in thesingular and/or may be used to describe a plurality or some othercombination of features, structures and/or characteristics. Though, itshould be noted that this is merely an illustrative example and claimedsubject matter is not limited to this example.

In the preceding detailed description, numerous specific details havebeen set forth to provide a thorough understanding of claimed subjectmatter. However, it will be understood by those skilled in the art thatclaimed subject matter may be practiced without these specific details.In other instances, methods and/or apparatuses that would be known byone of ordinary skill have not been described in detail so as not toobscure claimed subject matter.

In some circumstances, operation of a memory device, such as a change instate from a binary one to a binary zero or vice-versa, for example, maycomprise a transformation, such as a physical transformation. Withparticular types of memory devices, such a physical transformation maycomprise a physical transformation of an article to a different state orthing. For example, but without limitation, for some types of memorydevices, a change in state may involve an accumulation and/or storage ofcharge or a release of stored charge. Likewise, in other memory devices,a change of state may comprise a physical change, such as atransformation in magnetic orientation and/or a physical change ortransformation in molecular structure, such as from crystalline toamorphous or vice-versa. In still other memory devices, a change inphysical state may involve quantum mechanical phenomena, such as,superposition, entanglement, and/or the like, which may involve quantumbits (qubits), for example. The foregoing is not intended to be anexhaustive list of all examples in which a change in state form a binaryone to a binary zero or vice-versa in a memory device may comprise atransformation, such as a physical transformation. Rather, the foregoingis intended as illustrative examples.

While there has been illustrated and/or described what are presentlyconsidered to be example features, it will be understood by thoseskilled in the art that various other modifications may be made and/orequivalents may be substituted, without departing from claimed subjectmatter. Additionally, many modifications may be made to adapt aparticular situation to the teachings of claimed subject matter withoutdeparting from the central concept(s) described herein.

Therefore, it is intended that claimed subject matter not be limited tothe particular examples disclosed, but that such claimed subject mattermay also include all aspects falling within the scope of appended claimsand/or equivalents thereof.

What is claimed is:
 1. A method, comprising: forming one or morerecessed word-line contact regions in a first material of a phase changememory array, including performing a pitch multiplication operation. 2.The method of claim 1, wherein forming the one or more recessedword-line contact regions comprises forming buried n+ silicon word-linecontact regions.
 3. The method of claim 1, wherein performing the pitchmultiplication operation comprises conducting a self-aligneddouble-patterning operation on a stack of semiconductor layers includingthe first material over a substrate material, the first material havingan opposite conductivity type from the substrate material, and a secondmaterial over the first material, wherein the second material has theconductivity type of the substrate material.
 4. The method of claim 1,wherein the performing the pitch multiplication operation comprisesproviding a pattern interruption to create the recessed word-linecontact regions.
 5. The method of claim 4, wherein providing the patterninterruption creates a space created between a pair of selectortransistor that is greater than four times a width of one of theselector transistors in the phase change memory array.
 6. The method ofclaim 5, wherein the performing the pitch multiplication operationcomprises defining a plurality of selector transistors each having anemitter and forming a phase change memory storage component over eachemitter.
 7. The method of claim 4, wherein the performing the pitchmultiplication operation comprises patterning one or more word-linestrings in a stack of semiconductor layers, wherein the one or moreword-line strings individually comprise a collector component comprisingthe substrate material, a base component, and an emitter component, andwherein the one or more word-line strings are oriented in a word-linedirection.
 8. The method of claim 7, wherein the performing the pitchmultiplication operation further comprises depositing a dielectricmaterial over the one or more word-line strings.
 9. The method of claim8, wherein the performing the pitch multiplication operation furthercomprises creating one or more pairs of lines over the dielectricmaterial.
 10. The method of claim 9, wherein creating the one or morepairs of lines on the hard mask comprises spacing two of the one or morepairs of lines apart by a distance of approximately greater than fourtimes a width of a phase change memory storage component.
 11. The methodof claim 9, wherein the performing the pitch multiplication operationfurther comprises forming sidewall spacers on the one or more pairs oflines.
 12. The method of claim 11, wherein the performing the pitchmultiplication operation further comprises transferring a pattern of thesidewall spacers into the dielectric material.
 13. The method of claim11, wherein the performing the pitch multiplication operation withpattern interruption further comprises transferring a pattern of thespacers into the word-line strings.
 14. The method of claim 1, whereinforming the one or more recessed word-line contact regions in the firstmaterial comprises forming trenches to insulate memory cells of thephase change memory array.
 15. A memory device, comprising: an array ofmemory cells each comprising a selector transistor, the array includinga word-line contact region in a base component in substantially directcontact with an electrically conductive interconnect electricallycoupled to a word-line electrode, the word-line contact regionpositioned between memory cells of the array.
 16. The memory device ofclaim 15, wherein the word-line contact region has a width between apair of selector transistors of the array that is greater than two timesa width of each of the selector transistors.
 17. The memory device ofclaim 16, wherein the width of the word-line contact region is greaterthan four times a width of each of the selector transistors.
 18. Thememory device of claim 15, wherein the selector transistors areregularly spaced along a word-line direction in accordance with a pitchmultiplication pattern on either side of the word-line contact region,and the word-line contact region represents an interruption of the pitchmultiplication pattern.
 19. The memory device of claim 15, wherein theselector transistors comprise bipolar junction transistors.
 20. Thememory device of claim 15, wherein the base component comprises acathode component common to a plurality of the selector transistors. 21.The memory device of claim 15, wherein each selector transistor furthercomprises an emitter component electrically coupled to the basecomponent, wherein the word-line contact region is recessed relative tothe emitters.
 22. The memory device of claim 21, wherein each memorycell of the array of memory cells comprises a phase change memorystorage element electrically coupled between the emitter and a bit-lineelectrode.
 23. The memory device of claim 22, wherein the word-linecontact region has a width between a pair of emitters greater than fourtimes a width of the phase change memory storage component in eachmemory cell.
 24. The memory device of claim 15, further comprisingtrenches having a depth to insulate select transistors of adjacentmemory cells, wherein the word-line contact region has a depthsubstantially the same as the depth of the trenches.
 25. A method,comprising: energizing an electrode of a memory array to energize one ormore selector transistors of the memory array by way of an electricallyconductive interconnect in substantially direct contact with a recessedcontact region formed in a cathode material of the one or more selectortransistors, and to energize one or more phase change material storagecells electrically connected to the one or more selector transistors aspart of a programming operation.
 26. The method of claim 25, whereinemitters of the selector transistors are regularly spaced along aword-line direction in accordance with a pitch multiplication pattern oneither side of the recessed word-line contact region, and the word-linecontact region represents an interruption of the pitch multiplicationpattern.